EPC2016C

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Karolo ea Moetsi	EPC2016C
Moetsi	EPC
Tlhaloso	GANFET N-CH 100V 18A DIE
Sehlopha	lihlahisoa tse ikhethang tsa semiconductor
Lelapa	transistors - fets, mosfets - masoha
Sebikoe sa bophelo:	New from this manufacturer.
Delibari:	DHL FedEx Ups TNT EMS
Tefo	T/T Paypal Visa MoneyGram Western Union
Leqephe la lintlha	EPC2016C PDF

Ho fumaneha

E teng thepeng e teng ka lebenkeleng	134646
Theko ea thepa ka 'ngoe	$ 2.45000

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EPC2016C Litlhaloso

Mofuta	Tlhaloso
letoto:	eGaN®
sephutheloana:	Tape & Reel (TR)Cut Tape (CT)
boemo ba karolo:	Active
mofuta oa fet:	N-Channel
thekenoloji:	GaNFET (Gallium Nitride)
drain to source voltage (vdss):	100 V
metsi a hona joale - a tsoelang pele (id) @ 25°c:	18A (Ta)
drive voltage (max rds on, min rds on):	5V
rds ho (max) @ id, vgs:	16mOhm @ 11A, 5V
vgs(th) (max) @ id:	2.5V @ 3mA
tefiso ea heke (qg) (max) @ vgs:	4.5 nC @ 5 V
vgs (max):	+6V, -4V
matla a ho kenya (ciss) (max) @ vds:	420 pF @ 50 V
Fet tšobotsi:	-
ho felloa ke matla (max):	-
mocheso o sebetsang:	-40°C ~ 150°C (TJ)
mofuta oa ho kenya:	Surface Mount
sephutheloana sa sesebelisoa sa mofani:	Die
sephutheloana / mokotla:	Die

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